作业帮the last one thx you so so so muchby two orders of magnitude.Unfortunately,the poor resistivity of the silicon substrate does not allow the use of very high frequencies.Use of a high resistivity GaAs substrate with a much lower rf loss will make high
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the last one thx you so so so muchby two orders of magnitude.Unfortunately,the poor resistivity of the silicon substrate does not allow the use of very high frequencies.Use of a high resistivity GaAs substrate with a much lower rf loss will make high
the last one thx you so so so much
by two orders of magnitude.Unfortunately,the poor resistivity of the silicon substrate does not allow the use of very high frequencies.Use of a high resistivity GaAs substrate with a much lower rf loss will make higher microwave fre- quencies feasible with a corresponding increase in sensitiv- ity.We note that oscillators and mixers can be realized up to several GHz on silicon substrates and several tens of GHz on GaAs substrates.It should be possible to fabricate a large array of sensitive detectors monolithically integrated with their associated electronics.
the last one thx you so so so muchby two orders of magnitude.Unfortunately,the poor resistivity of the silicon substrate does not allow the use of very high frequencies.Use of a high resistivity GaAs substrate with a much lower rf loss will make high
由二个数量级.不幸地,硅体的粗劣的抵抗力不允许对甚高频的用途.对一个高的抵抗力GaAs 基体的用途以更低的rf 损失将使更高的微波fre- quencies 可行以在sensitiv- 的对应的增量ity .我们注意到,摆动器和搅拌器可能体会由几千兆赫在硅体和几十倍千兆赫决定在GaAs 基体.它应该是可能制造大一些敏感探测器整体地集成以他们伴生的电子.
是这个啦,希望对你有用.
大小的二个次序。 不幸地，矽基体的贫穷抵抗力不允许非常高频率的使用。 高的抵抗力砷化镓基体的使用用一个非常低的 rf 损失将会使较高的微波成为 fre- quencies 能实行的与 sensitiv 的对应增加- ity。我们注意在砷化镓基体上的十亿赫兹的矽基体和一些数十上，振动者和混合器能被直到一些十亿赫兹为止了解。 制造独石地与他们的联合电子学整合的敏感发现者的大排列应该是可能的。...
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大小的二个次序。 不幸地，矽基体的贫穷抵抗力不允许非常高频率的使用。 高的抵抗力砷化镓基体的使用用一个非常低的 rf 损失将会使较高的微波成为 fre- quencies 能实行的与 sensitiv 的对应增加- ity。我们注意在砷化镓基体上的十亿赫兹的矽基体和一些数十上，振动者和混合器能被直到一些十亿赫兹为止了解。 制造独石地与他们的联合电子学整合的敏感发现者的大排列应该是可能的。
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